Optoelectronic Semiconductor Apparatus and Carrier Assembly

ABSTRACT

A semiconductor apparatus with an optoelectronic device and a further device is disclosed. Embodiments of the invention provide a semiconductor apparatus with an optoelectronic device and a further device, wherein the optoelectronic device and the further device are interconnected to one another in parallel when the semiconductor apparatus is in operation, wherein the optoelectronic device is connected to a first contact and a second contact, the first contact and the second contact being configured to externally contact the semiconductor apparatus, and wherein the further device is connected with at least one further contact of the semiconductor apparatus.

This patent application is a national phase filing under section 371 ofPCT/EP2013/068733, filed Sep. 10, 2013, which claims the priority ofGerman patent application 10 2012 108 627.3, filed Sep. 14, 2012, eachof which is incorporated herein by reference in its entirety.

TECHNICAL FIELD

The present application relates to an optoelectronic semiconductorapparatus and a carrier assembly.

BACKGROUND

Optoelectronic semiconductor apparatuses often comprise two or moredevices which are operated jointly. Such integration of a plurality ofdevices may, however, complicate testing of the devices duringproduction.

SUMMARY OF THE INVENTION

According to at least one embodiment of the optoelectronic semiconductorapparatus, the semiconductor apparatus comprises an optoelectronicdevice. The optoelectronic device may be provided for receiving and/orfor generating electromagnetic radiation, in particular radiation in theinfrared, visible or ultraviolet spectral range.

In particular, the optoelectronic device may comprise a semiconductorbody with a semiconductor layer sequence, wherein the semiconductorlayer sequence comprises an active region provided for receiving and/orfor generating radiation.

According to at least one embodiment of the optoelectronic semiconductorapparatus, the semiconductor apparatus comprises a further device. Thefurther device may be an electronic device or a further optoelectronicdevice. The electronic device may, for example, take the form of an ESD(electrostatic discharge) protective diode which is provided to protectthe optoelectronic device from an electrostatic discharge.

The further optoelectronic device and the optoelectronic device may beof identical construction. For example, the optoelectronic device andthe further optoelectronic device may in each case comprise asemiconductor body, wherein the semiconductor bodies emerge from thesemiconductor layer sequence during production. The semiconductor layersof the optoelectronic device and the semiconductor layers of the furtheroptoelectronic device are thus, disregarding manufacturing tolerances,identical.

Alternatively, the optoelectronic device and the further optoelectronicdevice may also differ from one another. For example, the optoelectronicdevice and the further optoelectronic device may be provided to emitradiation with different peak wavelengths or with different spectraldistributions.

According to at least one embodiment of the optoelectronic semiconductorapparatus, the optoelectronic device and the further device areinterconnected to one another in parallel. The phrase “interconnected toone another in parallel” includes both an interconnection in which theconducting directions of the optoelectronic device and the furtherdevice are oriented parallel to one another and an interconnection withantiparallel orientation of the conducting directions.

According to at least one embodiment of the optoelectronic semiconductorapparatus, the optoelectronic device is connected with a first contactand a second contact. The first contact and the second contact areprovided for external electrical contacting of the semiconductorapparatus. For example, when the optoelectronic semiconductor apparatusis in operation, charge carriers can be injected from different sidesvia the first contact and the second contact into the active region ofthe optoelectronic device and there recombine to emit radiation.

According to at least one embodiment of the optoelectronic semiconductorapparatus, the further device is connected with at least one furthercontact of the semiconductor apparatus The further contact iselectrically separated from the first contact and from the secondcontact. There is thus no direct current path between the first contactand the further contact and between the second contact and the furthercontact.

By means of the further contact, the further device is electricallycontactable, in particular independently of the optoelectronic device,at least during production of the optoelectronic semiconductorapparatus.

According to at least one embodiment of the optoelectronic semiconductorapparatus, the semiconductor apparatus comprises an optoelectronicdevice and a further device which are interconnected to one another inparallel when the apparatus is in operation. The optoelectronic deviceis connected with a first contact and a second contact for externalcontacting of the semiconductor apparatus and the further device isconnected with at least one further contact of the semiconductorapparatus.

According to at least one embodiment of the optoelectronic semiconductorapparatus, during mounting on a connection carrier, the first contactand further contact are provided for fastening to a common electricalconnection carrier land of the connection carrier. During mounting, thefirst contact and further contact are thus electrically conductivelyconnected to one another via the common electrical connection carrierland. On fastening to the connection carrier, the first contact andfurther contact are thus electrically short-circuited. In contrast withthe conventional procedure, in which separate contacts are alsoelectrically contacted separately from one another, two contacts arethus intentionally electrically short-circuited in order to achieveelectrical parallel interconnection of the devices. The number ofelectrical connection carrier lands for contacting the optoelectronicsemiconductor apparatus is thus smaller than the number of contacts ofthe optoelectronic semiconductor apparatus. In particular, theoptoelectronic semiconductor apparatus may have exactly three contactsand the connection carrier exactly two electrical connection carrierlands for the semiconductor apparatus.

Such a semiconductor arrangement thus comprises at least oneoptoelectronic semiconductor apparatus and a connection carrier, whereinthe first contact and the further contact of the semiconductor apparatusare arranged on a common electrical connection carrier land of theconnection carrier.

According to at least one embodiment of the optoelectronic semiconductorapparatus, the optoelectronic device, prior to mounting on a connectioncarrier, may be operated independently of the further device by means ofthe first contact and the second contact. The optoelectronic device maythus be contacted, for example, for testing purposes, without thefurther device simultaneously also being brought into operation.

According to at least one embodiment of the optoelectronic semiconductorapparatus, the further device is electrically conductively connectedwith the second contact. Parallel operation of the optoelectronic deviceand the further device may proceed by establishing an electricalconnection between the first contact and the further contact.

According to at least one embodiment of the optoelectronic semiconductorapparatus, the semiconductor apparatus comprises a carrier with a majorface on which the optoelectronic device is arranged. The carrier extendsin a vertical direction between the major face and a back remote fromthe optoelectronic device. One or more lands for the optoelectronicdevice and/or for the further device may be provided on the major faceof the carrier. One or more back contact surfaces may be arranged on theback of the carrier. Preferably, all the contacts necessary foroperation of the semiconductor apparatus are accessible from the back.

The carrier preferably contains a semiconductor material, for example,silicon. Another semiconductor material, for instance germanium orgallium arsenide, may however also be used. Alternatively, the carriermay contain a ceramic such as for instance aluminum nitride, aluminumoxide or boron nitride.

According to at least one embodiment of the optoelectronic semiconductorapparatus, the carrier comprises a first land on the major face. Thefirst land is electrically conductively connected with theoptoelectronic device. The first land is electrically conductivelyconnected by means of a through via through the carrier with a firstback contact surface, arranged on the back of the carrier, of the firstcontact. The optoelectronic device is thus electrically contactable fromthe back of the carrier.

According to at least one embodiment of the optoelectronic semiconductorapparatus, the carrier comprises, on the major face, a first frontcontact surface. The first front contact surface is connected by meansof a further through via with the first back contact surface. The firstfront contact surface is furthermore spaced from the first land. Inaddition to being electrically contactable via the first back contactsurface, the optoelectronic device is thus also electrically contactablevia the first front contact surface. In this way, testing thesemiconductor apparatus from the front is simplified.

According to at least one embodiment of the optoelectronic semiconductorapparatus, the semiconductor apparatus is free of a direct front currentpath between the first land and the first front contact surface. Acurrent path between the first land and the first contact surface passestwice through the carrier in a vertical direction extendingperpendicularly to the major face. When testing the semiconductorapparatus by electrically contacting the first front contact surface, itis thus also possible for the through via to be tested and taken intoaccount. The first land may furthermore be constructed such that it canbe electrically contacted on the front for testing purposes. Forexample, in plan view onto the semiconductor apparatus, the first landmay project beyond the optoelectronic device. At least one region of thefirst land is thus freely accessible on the front.

In plan view onto the semiconductor apparatus, the first front contactsurface and the optoelectronic device may be arranged adjacent oneanother without overlap.

According to at least one embodiment of the optoelectronic semiconductorapparatus, the further device is integrated in the carrier. The furtherdevice may, for example, be an ESD protective diode integrated into thecarrier. The ESD protective diode may, for example, be formed by meansof at least one doped region of the carrier. The carrier may inparticular comprise a p-conductive region and an n-conductive region.

According to at least one embodiment of the optoelectronic semiconductorapparatus, a distance between the first contact and the further contactis smaller than a distance between the first contact and the secondcontact. The distance between the first contact and the further contactmay, for example, amount to between 1 μm and 100 μm inclusive.

In order to produce a plurality of semiconductor apparatuses the carrierpreferably takes the form of a carrier assembly. Once the carrierassembly has been populated with optoelectronic devices and optionallyelectronic devices, semiconductor apparatuses, in which in each casepart of the carrier assembly forms the carrier, can be obtained bysingulating the carrier assembly.

The carrier assembly preferably comprises a plurality of device regionswhich are furthermore preferably arranged adjacent one another in alateral direction, for example, as a matrix. At least one device region,preferably each device region, of the carrier assembly preferablycomprises one or more of the features described in connection with thecarrier.

According to at least one embodiment of the carrier assembly, thecarrier assembly comprises a plurality of device regions which arearranged adjacent one another in a lateral direction. Each device regioncomprises a first land and a second land on a major face, which landsare in each case provided for electrically contacting an optoelectronicsemiconductor device. On a back opposite the major face, each deviceregion comprises a first back contact surface and a second back contactsurface. The first back contact surface and the second back contactsurface are in each case electrically conductively connected by means ofa through via with the first land and the second land respectively. Eachdevice region comprises on the major face a first front contact surfacewhich is electrically conductively connected by means of a furtherthrough via with the first back contact surface.

The carrier assembly is particularly suitable for producing asemiconductor apparatus as described above. Features described inconnection with the semiconductor apparatus may therefore also be usedfor the carrier assembly and vice versa.

BRIEF DESCRIPTION OF THE DRAWINGS

Further features, embodiments and convenient aspects are revealed by thefollowing description of the exemplary embodiments in conjunction withthe figures.

In the drawings:

FIGS. 1A and 1B show an exemplary embodiment of a semiconductorapparatus and FIG. 1C shows an exemplary embodiment of a semiconductorarrangement with such a semiconductor apparatus in schematic sectionalview;

FIG. 2A shows a second exemplary embodiment of a semiconductor apparatusin schematic sectional view with associated equivalent circuit diagramsbefore (FIG. 2B) and after (FIG. 2C) electrical contacting of thesemiconductor apparatus;

FIGS. 3A and 3B show a portion of a carrier assembly in schematic planview (FIG. 3A) and associated sectional view in FIG. 3B; and

FIGS. 4A and 4B show a portion of a carrier assembly in schematic planview (FIG. 4A) and associated sectional view in FIG. 4B.

Identical, similar or identically acting elements are provided with thesame reference numerals in the figures. The figures and the size ratiosof the elements illustrated in the figures relative to one another arenot to be regarded as being to scale. Rather, individual elements may beillustrated on an exaggeratedly large scale for greater ease ofdepiction and/or better comprehension.

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

A first exemplary embodiment of a semiconductor apparatus is shown inschematic sectional view in FIG. 1A. The semiconductor apparatus 1comprises an optoelectronic device 2. The optoelectronic device 2comprises a semiconductor body 20 with a semiconductor layer sequence.The semiconductor layer sequence forms the semiconductor body. Thesemiconductor layer sequence comprises an active region 23 provided forgenerating radiation, which active region is arranged between a firstsemiconductor layer 21 and a second semiconductor layer 22. The firstsemiconductor layer, the second semiconductor layer and the activeregion are preferably in each case of multilayer construction. Theoptoelectronic device 2 may, for example, take the form of luminescentdiode chip, for instance a light-emitting diode chip or a laser diodechip. Alternatively, the optoelectronic device 2 may also take the formof a radiation receiver in which radiation absorbed in the active region23 is detected.

The semiconductor body 20, in particular the active region 23 preferablycontains a III-V semiconductor material. III-V-semiconductor materialsare particularly suitable for producing radiation in the ultraviolet(Al_(x) In_(y) Ga_(1-x-y) N) through the visible (Al_(x) In_(y)Ga_(1-x-y) N, in particular for blue to green radiation, or Al_(x)In_(y) Ga_(1-x-y) P, in particular for yellow to red radiation) as faras into the infrared (Al_(x) In_(y) Ga_(1-x-y) As) range of thespectrum. Here in each case 0<x<1, 0≦y≦1 and x+y≦1 applies, inparticular with x≠1, y≠1, x≠0 and/or y≠0. Using III-V semiconductormaterials, in particular from the stated material systems, it isadditionally possible to achieve high internal quantum efficiencies inthe generation of radiation.

The optoelectronic device 2 is arranged on a carrier 5. The carrierextends in vertical direction between a major face 50 facing theoptoelectronic device 2 and a back 51 remote from the device.

The carrier 5 preferably contains a semiconductor material, for example,silicon. Another semiconductor material, for instance gallium arsenideor germanium, may however also be used. An electronic device can beparticularly straightforwardly integrated into a carrier based on asemiconductor material. In particular, if the further device 3 is formedoutside the carrier 5, a different material may be used for the carrier,for example, a ceramic, for instance aluminum nitride, aluminum oxide orboron nitride.

A first land 41 and a second land 42 are formed on the major face 50.The lands 41, 42 are formed and arranged such that charge carriers canbe injected from different sides into the active region 23 via thelands. The first land 41 and the second land 42 are preferably arrangedwithout overlap on the major face 50 of the carrier and electricallyinsulated from one another. In plan view onto the semiconductorapparatus 1, the optoelectronic device 2, the first land 41 and thesecond land 42 overlap at least in places.

In the exemplary embodiment shown, the semiconductor body 20 comprises aplurality of recesses 25 which in each case extend from the side of thesemiconductor body facing the carrier 5 through the second semiconductorlayer 22 and the active region 23. A first contacting layer 27 is formedin the recess 25. The first contacting layer 27 is electricallyconductively connected with the first land 41, for example, via anelectrically conductive connecting means, for instance a brazing solderor an electrically conductive adhesive layer (not explicitly shown inthe figures).

A second contacting layer 28 is formed on the second semiconductor layer22. The second contacting layer 28 serves for electrical contacting ofthe second semiconductor layer 22. The second contacting layer 28furthermore preferably takes the form of a minor layer for the radiationgenerated in the active region 23. The second contacting layerpreferably contains silver, rhodium, palladium, iridium or aluminum or ametal alloy with at least one of the stated materials. The statedmaterials are distinguished by an elevated reflectivity in the visibleand ultraviolet spectral range. The second contacting layer 28 isarranged in places between the first contacting layer 27 and the secondsemiconductor layer 22. In plan view onto the semiconductor apparatus,the first contacting layer and the second contacting layer thus overlapin places.

An electrical insulation layer, for example, an oxide layer such as asilicon oxide layer, is preferably formed between the first contactinglayer 27 and the second contacting layer 28 such that there is no directelectrical contact between the first contacting layer and the secondcontacting layer. For simplicity of depiction, this insulation layer isnot shown in the figures. Furthermore, an insulation layer may beprovided in the region of the recesses 25 for electrically insulatingthe first contacting layer 27 from the active region 23 and from thesecond semiconductor layer 22 (not explicitly shown).

On the side remote from the carrier 5, the semiconductor body 20 has apatterning 26. The patterning is provided to increase the outcouplingefficiency of the radiation generated in the active region 23.Patterning may proceed, for example, mechanically, for instance bygrinding or lapping, and/or chemically, for instance by wet chemical ordry chemical etching. The patterning may furthermore be regularly orirregularly formed.

The semiconductor apparatus 1 furthermore comprises a first contact 6and a second contact 7. External electrical contacting of thesemiconductor apparatus 1 proceeds via these contacts. The semiconductorapparatus takes the form of a surface-mounted device (SMD).

In the exemplary embodiment shown, the optoelectronic device 2 takes theform of a thin-film device in which a growth substrate for thesemiconductor layer sequence has been removed. In contrast thereto, theoptoelectronic device 2 may instead comprise the growth substrate. Thefirst semiconductor layer 21 and the second semiconductor layer 22 mayalso be contacted in different ways.

The first contact 6 has a first back contact surface 61 and a firstfront contact surface 62. The first front contact surface 62 and thefirst land 41 are arranged adjacent one another without overlap on themajor face 50 of the carrier 5. The first land 41 is electricallyconductively connected by means of a through via 65 with the first backcontact surface 61. Furthermore, the first front contact surface 62 iselectrically conductively connected by means of a further through via 66with the first back contact surface 61.

The first land 41 and the first front contact surface 62 are thus notconnected to one another via a direct connection on the front, butinstead only via a current path which extends in the vertical directiontwice through the carrier 5.

Similarly, the second contact 7 has a second back contact surface 71, asecond front contact surface 72, a through via 75 and a further throughvia 76. The second front contact surface 72 is thus electricallyconductively connected with the second land 42 by means of the throughvia 75 and the further through via 76.

The semiconductor apparatus 1 furthermore comprises a further device 3.In the exemplary embodiment shown, the further device 3 takes the formof an electronic device which is integrated into the carrier 5. Inparticular, the electronic device 3 is provided as an ESD protectivediode for protecting the optoelectronic device 2 from an electrostaticdischarge. The protective diode may, for example, be formed bydifferently doped regions of the carrier 5. This is described in greaterdetail in connection with FIGS. 4A and 4B. In contrast thereto, theelectronic device may, however, also be formed on the carrier 5.

The electronic device 3 comprises a further contact 8. The furtherdevice 3 is externally electrically contactable via the further contact8 and the second contact 7. FIG. 1B shows an electrical interconnectionof the semiconductor apparatus 1 for testing purposes. By applying anelectrical voltage between the first front contact surface 62 of thefirst contact 6 and the second front contact surface 72 of the secondcontact 7, charge carriers can be injected from different sides into theactive region 23 of the optoelectronic device 2 and there recombine toemit radiation.

The further device 3, on the other hand, is electrically insulated fromat least one of the contacts, in the exemplary embodiment shown from thefirst contact 6, such that the optoelectronic device 2 may be testedindependently of the ESD protective diode. In particular, theoptoelectronic device 2 may also be tested in non-conducting direction.If, on the other hand, the further device 3 were electricallyconductively connected with the first contact 6 and the second contact7, the optoelectronic device 2 could not be characterized in thenon-conducting direction since the charge carriers would drain via thefurther device 3 due to the antiparallel orientation of the conductingdirections.

Furthermore, the optoelectronic device 2 is characterized by way of acurrent path which passes via the through vias 65, 66 of the firstcontact 6 and via the through vias 75, 76 of the second contact 7 of thecarrier 5. In this manner, the influence of the through vias, forexample, with regard to the series resistance of the semiconductorapparatus 1, may also be investigated.

In addition, the optoelectronic device 2 may also be characterized bycontacting the first land 41 instead of first front contact surface 62.In this case, the through via 65 and the further through via 66 are thusbypassed. The series resistance caused by the through vias may beparticularly reliably determined in this manner.

FIG. 1C, which also represents such a semiconductor arrangement, showsthe interconnection of the semiconductor apparatus 1 after mounting on aconnection carrier 9. The connection carrier 9 has a first connectioncarrier land 91 and a second connection carrier land 92. The firstconnection carrier land 91 is electrically conductively connected withthe first contact 6 and the further contact 8. The second connectioncarrier land 92 is electrically conductively connected with the secondcontact 7. The first contact 6 and the further contact 8 are thusarranged on a common connection carrier land. Mounting the semiconductorapparatus 1 results in a parallel interconnection of the optoelectronicdevice 2 with the further device 3. With regard to conducting direction,the optoelectronic device 2 and the further device 3 are orientedantiparallel to one another, such that, in the event of electrostaticcharging in the non-conducting direction of the optoelectronic device 2,charge carriers may drain away via the further device 3.

An additional production step for parallel interconnection of theoptoelectronic device 2 and further device 3 may thus be dispensed with.The distance between the further contact 8 and the first contact 6 isaccordingly preferably smaller than the distance between the furthercontact 8 and the second contact 7 and smaller than the distance betweenthe first contact 6 and the second contact 7. Thanks to a small distancebetween the first contact and the further contact, these contacts may bemore simply electrically conductively connected to one another via acommon connection carrier, without the size of the connection carrierland 91 having to be increased for this purpose.

Using the described contact guidance, it is possible simply and reliablyto provide a parallel interconnection of two devices in a semiconductorapparatus, while nevertheless permitting at least one of the devices orboth of the devices to be tested separately from one another duringproduction. In particular, an ESD protective diode can be integratedinto the carrier 5 of an optoelectronic device 2 without the deviceintegrated into the carrier complicating characterization for testingpurposes.

It goes without saying that the semiconductor apparatus 1 may alsocomprise more than one further device 3. To ensure separatecontactability in each case, a further contact 8 may be associated witheach further device. Alternatively it is also conceivable for a furthercontact to be associated in each case with a group having two or morefurther devices.

The second exemplary embodiment of a semiconductor apparatus shown inFIG. 2A substantially corresponds to the first exemplary embodimentdescribed in connection with FIGS. 1A to 1C. At variance therewith, thefurther device 3 is an optoelectronic device.

The further device 3 is not integrated into the carrier 5, but insteadarranged on the major face 50 of the carrier 5.

In particular, the optoelectronic device 2 and the further device 3 maybe of identical construction. For example, the optoelectronic device 2and the further device 3 may emit radiation in the same wavelengthrange. During production, the semiconductor bodies 20 of the devices mayemerge from the same semiconductor layer sequence. Alternatively, theoptoelectronic device 2 and the further device 3 may also differ fromone another. For example, the devices may emit radiation in wavelengthranges which differ from one another or with spectral distributionswhich differ from one another and/or intensities which differ from oneanother.

Prior to mounting of the semiconductor apparatus 1, the optoelectronicdevice 2 and the further optoelectronic device 2, as shown schematicallyin FIG. 2B, are still electrically contactable separately from oneanother.

After mounting on a connection carrier 9, the devices 2, 3 areinterconnected to one another in parallel as shown in FIG. 2C. In oneembodiment of the further device 3 as an optoelectronic device, theoptoelectronic device 2 and the further device 3 are preferablyinterconnected in parallel with regard to their conducting direction,such that both devices emit radiation simultaneously. In this manner,the total radiant power emitted by the semiconductor apparatus 1 may beincreased.

One exemplary embodiment of a carrier assembly is shown in FIG. 3A inschematic plan view and in an associated sectional view in FIG. 3B. Forsimplicity of depiction, the figures in each case show a portion of thecarrier assembly which corresponds to exactly one device region 500. Inparticular after population with optoelectronic devices 2 and optionallyfurther devices, the carrier assembly may be singulated along dividinglines 550, such that each semiconductor apparatus comprises a carrier 5.Such a carrier may in particular be used in a semiconductor apparatus ofthe kind described in connection with FIGS. 1A to 1C and 2A to 2C.

As described in connection with FIGS. 1A to 1C, the carrier 5 comprisesa first land 41 and a second land 42 on a major face 50. On mounting anoptoelectronic device in a mounting region 501, the optoelectronicdevice in each case at least in places overlaps the first land and thesecond land.

The first land 41 is electrically conductively connected by means of athrough via 65, a first back contact surface 61 and a further throughvia 66 with a first front contact surface 62.

Similarly, the second land 42 is electrically conductively connected bymeans of a through via 75, a second back contact surface 71 and afurther through via 76 with a second front contact surface 72. Aftermounting the optoelectronic device 2 in the mounting region 501, theoptoelectronic device 2 can be electrically contacted from the front,where the devices are also arranged. The semiconductor apparatusessingulated from the carrier assembly may, on the other hand, beelectrically contacted on the back with a reduced space requirement.

The second exemplary embodiment of a carrier assembly shown in FIG. 4Asubstantially corresponds to the first exemplary embodiment described inconnection with FIGS. 3A and 3B. At variance therewith, the deviceregion 500 comprises a further contact 8. The further contact 8comprises a further back contact surface 81, a further front contactsurface 82 and a through via 85. In plan view onto the carrier assembly,the first back contact surface 61 and the further back contact surface81 are arranged adjacent one another without overlap.

The carrier 5 furthermore comprises a first region 55 and a secondregion 56, wherein the first region and the second region aredifferently doped from one another with regard to conduction type. Forexample, the first region may be p-conductive and the second regionn-conductive or vice versa. A further device 3 in the form of aprotective diode integrated into the carrier is formed by means of theregions 55 and 56. In the exemplary embodiment shown, the further device3 is formed in the region of the major face 50 of the carrier 5. Aninsulation layer 52 is arranged on the major face 50 of the carrier 5.The insulation layer is arranged between the carrier and the second land42 and between the carrier and the further front contact surface. Theinsulation layer is opened up in places, such that the second land iselectrically conductively connected in an opening with the first region55 and the further front contact surface 82 is electrically conductivelyconnected in a further opening with the second region 56.

In the exemplary embodiment shown, the first region 55 is electricallyconductively connected with the second land 42 and the second region 56is electrically conductively connected with the further front contactsurface 82 of the further contact 8. The position and configuration ofthe further device 3 may, however, also deviate therefrom. For example,the first region 55 and the second region 56 may also be arranged on theback of the carrier 5, wherein one of the regions is electricallyconductively connected with the second contact 7, for example, thesecond back contact surface 71, and the other region is electricallyconductively connected with the further contact 8, for example, thefurther back contact surface 81. For the purpose of separately testingthe mounted optoelectronic device independently of the further device 3,conveniently only either the first region 55 or the second region 56 iselectrically conductively connected with the first contact 6 or thesecond contact 7.

The invention is not restricted by the description given with referenceto the exemplary embodiments. Rather, the invention encompasses anynovel feature and any combination of features, including in particularany combination of features in the claims, even if this feature or thiscombination is not itself explicitly indicated in the claims or theexemplary embodiments.

1-15. (canceled)
 16. A semiconductor apparatus with an optoelectronicdevice and a further device, wherein the optoelectronic device and thefurther device are interconnected to one another in parallel when thesemiconductor apparatus is in operation, wherein the optoelectronicdevice is connected with a first contact and a second contact, the firstcontact and the second contact being configured to externally contactthe semiconductor apparatus, and wherein the further device is connectedwith at least one further contact of the semiconductor apparatus. 17.The semiconductor apparatus according to claim 16, wherein, duringmounting on a connection carrier, the first contact and the furthercontact are provided for fastening to a common electrical connectioncarrier land of the connection carrier.
 18. The semiconductor apparatusaccording to claim 16, wherein the optoelectronic device, prior tomounting on a connection carrier, may be operated independently of thefurther device via the first contact and the second contact.
 19. Thesemiconductor apparatus according to claim 16, wherein the furtherdevice is electrically conductively connected with the second contact.20. The semiconductor apparatus according to claim 16, wherein thesemiconductor apparatus comprises a carrier with a major face on whichthe optoelectronic device is arranged.
 21. The semiconductor apparatusaccording to claim 20, wherein the carrier comprises a first land on themajor face, which land is electrically conductively connected with theoptoelectronic device and which is electrically conductively connectedby a through via through the carrier with a back remote from theoptoelectronic device with a first back contact surface of the firstcontact.
 22. The semiconductor apparatus according to claim 21, whereinthe carrier comprises on the major face a first front contact surfacewhich is spaced from the first land and is connected by a furtherthrough via with the first back contact surface.
 23. The semiconductorapparatus according to claim 22, wherein the semiconductor apparatus isfree of a direct front current path between the first land and the firstfront contact surface and a current path between the first land and thefirst contact surface passes twice through the carrier in a verticaldirection extending perpendicularly to the major face.
 24. Thesemiconductor apparatus according to claim 20, wherein the carriercomprises a first land on the major face, which land is electricallyconductively connected with the optoelectronic device, wherein thecarrier comprises a second land on the major face, which land iselectrically conductively connected with the optoelectronic device,wherein the carrier comprises a further front contact surface on themajor face, which further front contact surface is electricallyconductively connected by a through via through the carrier with afurther back contact surface of the further contact arranged on a backremote from the optoelectronic device, and wherein a current pathextending through the carrier between the further front contact surfaceand the second land forms an ESD protective diode.
 25. The semiconductorapparatus according to claim 20, wherein the further device isintegrated into the carrier.
 26. The semiconductor apparatus accordingto claim 20, wherein the carrier contains a semiconductor material. 27.The semiconductor apparatus according to claim 16, wherein the furtherdevice is an ESD protective diode.
 28. The semiconductor apparatusaccording to claim 16, wherein the further device is a furtheroptoelectronic device.
 29. The semiconductor apparatus according toclaim 16, wherein a distance between the first contact and the furthercontact is smaller than a distance between the first contact and thesecond contact.
 30. A carrier assembly with a plurality of deviceregions which are arranged adjacent one another in a lateral direction,wherein each device region comprises a first land and a second land on amajor face, which lands are in each case provided for electricallycontacting an optoelectronic semiconductor device, wherein each deviceregion comprises on a back opposite the major face a first back contactsurface and a second back contact surface, wherein the first backcontact surface and the second back contact surface are in each caseelectrically conductively connected by a through via with the first landand the second land respectively, and wherein each device regioncomprises on the major face a first front contact surface which iselectrically conductively connected by a further through via with thefirst back contact surface.
 31. The carrier assembly according to claim30, wherein a current path extending through the carrier assemblybetween the further front contact surface and the second land of thedevice regions in each case forms an ESD protective diode.
 32. Asemiconductor apparatus with an optoelectronic device and a furtherdevice, wherein the optoelectronic device and the further device areinterconnected to one another in parallel when the semiconductorapparatus is in operation, wherein the optoelectronic device isconnected to a first contact and a second contact, the first contact andthe second contact being configured to externally contact thesemiconductor apparatus, wherein the further device is connected with atleast one further contact of the semiconductor apparatus, the furtherdevice being externally electrically contactable via the furthercontact, wherein the semiconductor apparatus comprises a carrier with amajor face facing the optoelectronic device and with a back arrangedremote from the optoelectronic device, wherein the optoelectronic deviceis arranged on the major face, and wherein the first contact, the secondcontact and the further contact are accessible from the back.